CJ3139KW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ3139KW P-Channel Power MOSFET V(BR)DSS 9 RDS(on)MAX  Pȍ#9 Pȍ#9 95 Pȍ（TYP）# 189 ID $ GENERRAL DESCRIPTION This Single P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). SOT-323 1. GATE 2. SOURCE 3. DRAIN FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed MARKING APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers Equivalent Circuit D G S Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Typical Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient Storage Temperature Junction Temperature Symbol VDSS VGS ID IDM PD RθJA Tj Tstg ...