CJ3407

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: 3407 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ Tstg Value -30 ±20 -4.1 350 357 150 -55~+150 Unit V V A mW ℃/W ℃ ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Static characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-resistance (note 1) Forward tranconductan...