30V N-Channel MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
19mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 40mΩ @ VGS = 1.8V 120mΩ @ VGS = 1.5V
ID Max...
Description
Product Summary
BVDSS 30V
RDS(ON) Max
19mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 40mΩ @ VGS = 1.8V 120mΩ @ VGS = 1.5V
ID Max TC = +25°C
15A 14A 10A 6A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Battery Management Application Power Management Functions DC-DC Converters
DMN3020UFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 Grams (Approximate)
U-DFN2020-6 (Type F)
D
ESD PROTECTED
Top View
Bottom View
Pin Out Bottom View
G
Gate Protection Diode
S
Internal Schematic
Ordering Information (N...
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