TIP35CP

TIP35CP TIP36CP Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN-PNP transistors Applications ■ General purpose ■ Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-3P Figure 1. Internal schematic diagrams Table 1. Device summary Order code TIP35CP TIP36CP Marking TIP35CP TIP36CP Package TO-3P September 2008 Rev 2 Packaging Tube 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter VCBO VCEO VEBO IC ICM IB Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Total dissipation at Tcase = 25 °C Storage temperature Max. operating junction temperature For PNP type ...