Document
SEME
LAB
MECHANICAL DATA Dimensions in mm
6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215)
123
2.18 (0.086) 2.44 (0.096)
0.84 (0.033) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051)
5.97 (0.235) 6.22 (0.245)
0.76 (0.030) 1.14 (0.045)
0.64 (0.025) 0.89 (0.035)
8.89 (0.350) 9.78 (0.385)
BUL65A
ADVANCED DISTRIBUTED BASE DESIGN
HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING
2.31 (0.091)
Typ.
2.31 (0.091)
Typ.
4.60 (0.181) Typ.
0.46 (0.018) 0.61 (0.024)
1.04 (0.041) 1.14 (0.045)
Pin 1 – Base
I-PAK (TO251)
Pad 2 – Collector Pad 3 – Emitter
FEATURES
• Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Ring.