N-channel Power MOSFET
STL7N6F7
N-channel 60 V, 0.021 Ω typ., 7 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet - preliminar...
Description
STL7N6F7
N-channel 60 V, 0.021 Ω typ., 7 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet - preliminary data
1 2 3
1 2 3
6 5 4
PowerFLAT™ 2x2
Figure 1: Internal schematic diagram 1(D) 2(D) 3(G)
DS
Features
Order code STL7N6F7
VDS 60 V
RDS(on) max 0.025 Ω
ID 7A
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
6(D) 5(D) 4(S) Bottom view
AM11269v1
Order code STL7N6F7
Marking ST7N
Table 1: Device summary Package
PowerFLAT™ 2x2
Packing Tape and reel
August 2015
DocID028257 Rev 1
This is preliminary information on a new product now in development or under...
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