MJE200G (NPN), MJE210G (PNP)
Complementary Silicon Power Plastic Transistors
These devices are designed for low voltage...
MJE200G (
NPN), MJE210G (
PNP)
Complementary Silicon Power Plastic
Transistors
These devices are designed for low voltage, low−power, high−gain audio amplifier applications.
Features
High DC Current Gain Low Collector−Emitter Saturation Voltage High Current−Gain − Bandwidth Product Annular Construction for Low Leakage These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25_C Derate above 25_C
VCEO VCB VEB IC ICM IB PD
40 Vdc 25 Vdc 8.0 Vdc 5.0 Adc 10 Adc 1.0 Adc
15 W 0.12 mW/_C
Total Power Dissipation @ TC = 25_C Derate above 25_C
PD 1.5 W
0.012
mW/_C
Operating and Storage Junction Temperature Range
TJ, Tstg –65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of thes...
