MJE210

MJE200 NPN MJE210 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJA ΘJC 40 25 8.0 5.0 10 1.0 1.5 15 -65 to +150 83.4 8.34 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=40V ICBO VCB=40V, TJ=125°C IEBO VEB=8.0V BVCEO IC=10mA 25 VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=2.0A, IB=200mA VCE(SAT) IC=5.0A, IB=1.0A VBE(SAT) IC=5.0A, IB=1.0A VBE(ON) VCE=1.0V, ...