BD139G

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features High DC Current Gain BD 135, 137, 139 are complementary with BD 136, 138, 140 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD135G BD137G BD139G VCEO 45 60 80 Vdc Collector−Base Voltage BD135G BD137G BD139G VCBO 45 60 100 Vdc Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC IB PD 5.0 Vdc 1.5 Adc 0.5 Adc 1.25 Watts 10 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 Watts 100 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table...