BD238

BD238 Medium Power Transistors Features: Epitaxial Silicon Power Transistors. Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions A B C D E F G L M N P S Pin Configuration: 1. Emitter 2. Collector 3. Base Minimum Maximum 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 (Typical) 0.49 0.75 4.5 (Typical) 15.7 (Typical) 1.27 (Typical) 3.75 (Typical) 3.0 3.2 2.5 (Typical) Dimensions : Millimetres Page 1 10/05/08 V1.1 BD238 Medium Power Transistors Absolute Maximum Ratings Description Collector-Base Voltage Collector-Emitter Voltage Collector Emitter Voltage (RBE = 1K) Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation at TC = 25°C Derate above 25°C Power Dissipation at Ta = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Junction to Case Junction to Ambient in Free Air Symbol VCBO VCEO VCER VEBO IC ICM PD Tj, Tstg Rth (j-c) Rth (j-a) BD238 100 80 100 5.0 2.0 6.0 25 1.25 10 -...