JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD234/236/238 TRANSISTOR (PNP...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate
Transistors
BD234/236/238
TRANSISTOR (
PNP)
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO VCEO VEBO IC
Collector-Base Voltage BD234
BD236
BD238
Collector-Emitter Voltage BD234
BD236
BD238
Emitter-Base Voltage
BD234
BD236
BD238
Collector Current –Continuous
-45 -60 -100 -45 -60 -80
-5
-2
V V V A
PC Collector Power Dissipation
1.25 W
TJ Junction Temperature Tstg Storage Temperature
150 -55-150
℃ ℃
TO-126
1. EMITTER 2. COLLECTOR 3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage Collector cut-off current
Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency
BD234 BD236 BD238 BD234 BD236 BD238
BD234 BD236 BD238
Symbol V(BR)CBO
V(BR)CEO V(BR)E...
