MJE181G

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features High DC Current Gain High Current−Gain − Bandwidth Product Annular Construction for Low Leakages Epoxy Meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Base Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G Collector−Emitter Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G Symbol VCB VCEO Value 60 80 100 40 60 80 Unit Vdc Vdc Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range VEB IC ICM IB PD PD TJ, Tstg 7.0 3.0 6.0 1.0 12.5 0.012 1.5 ...