Silicon Transistor. 2N3055 Datasheet

2N3055 Transistor. Datasheet pdf. Equivalent

Part 2N3055
Description NPN Power Silicon Transistor
Feature 2N3055 NPN Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF19500/407 .
Manufacture MA-COM
Datasheet
Download 2N3055 Datasheet



2N3055
2N3055
NPN Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/407
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
On Characteristics
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Emitter - Base Saturation Voltage
Dynamic Characteristics
Test Conditions
Symbol Units
IC = 200 mAdc
IC = 200 mAdc, RBE = 100 Ω
VBE = -1.5 Vdc, IC = 200 mAdc
VCE = 60 Vdc
VBE = = -1.5 Vdc, VCE = 100 Vdc
VEB = 7.0 Vdc
V(BR)CEO
V(BR)CER
V(BR)CEX
Vdc
ICEO
ICEX
mAdc
IEBO mAdc
IC = 0.5 Adc, VCE = 4.0 Vdc
IC = 4.0 Adc, VCE = 4.0 Vdc
IC = 10.0 Adc, VCE = 4.0 Vdc
IC = 4.0 Adc, IB = 0.4 Adc
IC = 10.0 Adc, IB = 3.3 Adc
IC = 4.0 Adc, VCE = 4.0 Vdc
HFE -
VCE(SAT) Vdc
VBE(SAT) Vdc
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IC = 1 Adc, VCE= 4.0 Vdc, f = 100 kHz
| HFE |
Min.
70
80
90
40
20
5
8
Output Capacitance
Switching Characteristics
Turn-On Time
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF
VCC = 30 Vdc; IC = 4.0 Adc; IB1 = 0.4 Adc TON µs
Turn-Off Time
IC = 4.0 Adc; IB1= -IB2= 0.4 Adc
Safe Operating Area
DC Tests:
Test 1:
Test 2:
TC = +25 °C, I Cycle, t = 1.0 s
VCE = 7.8 Vdc, IC = 15 Adc
VCE = 70.0 Vdc, IC = 1.67 Adc
TOFF
µs
Max.
1
1
1
60
0.75
2.0
1.4
40
700
6
12
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support



2N3055
2N3055
NPN Power Silicon Transistor
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TA = 25°C1
Operating & Storage Temperature Range
1. Derate linearly @ 34.2 mW / °C for TA = 25 °C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TOP, TSTG
Symbol
RθJC
Outline Drawing
Value
70 Vdc
100 Vdc
7 Vdc
7 Vdc
15 Adc
6W
-65°C to +200°C
Rev. V1
Max. Value
1.5°C/W
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support





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