Document
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ3000/3001
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ2500/2501
APPLICATIONS ·For use as output devices in complementary
general purpose amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
MJ3000 MJ3001
Open emitter
VCEO
Collector-emitter voltage
MJ3000 MJ3001
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current IB Base current
PD Total power dissipation
TC=25
Tj Junction temperature Tstg Storage temperature
VALUE 60 80 60 80 5 10 0.2 150 200
-55~200
UNIT V
V V A A W
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
MJ3000 MJ3.