2N5886

2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A. Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A. Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres PNP 2N5884 NPN 2N5886 25 Ampere Complementary Silicon Power Transistors 80 Volts 200 Watts TO-3 Characteristic Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Characteristic Thermal Resistance Junction to Case Symbol Rθjc VCEO VCBO VEBO I...