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BUV21 Dataheets PDF



Part Number BUV21
Manufacturers ETC
Logo ETC
Description NPN Silicon Low Frequency High Power Switching Transistor
Datasheet BUV21 DatasheetBUV21 Datasheet (PDF)

BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: (Ta = 25°C ) Parameter name Total Dissipation (Tc=25°C) Symbols Unit Ptot W .

  BUV21   BUV21



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BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: (Ta = 25°C ) Parameter name Total Dissipation (Tc=25°C) Symbols Unit Ptot W BUV20 BUV21 Specifications BUV22 250 BUV23 BUV24 Max. Collector Current ICM A 50 40 40 30 20 Junction Temperature Tjm °C 175 Collector-Base Breakdown V(BR)CBO V Voltage ≥160 ≥250 ≥300 ≥400 ≥450 Collector-Emitter Breakdown V(BR)CEO V Voltage Emitter-Base Breakdown Voltage V(BR)EBO V ≥125 ≥200 ≥250 IC=10mA ≥7 IE=1mA ≥325 ≥400 Collector- Emitter IC= VCE(sat) V ≤1.2 50A ≤1.5 25A ≤1.5 20A ≤0.8 8A ≤0.6 6A Saturation Voltage Drop IB= 5A.


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