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BUV22

ETC

NPN Silicon Low Frequency High Power Switching Transistor

BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working curr...


ETC

BUV22

File Download Download BUV22 Datasheet


Description
BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: (Ta = 25°C ) Parameter name Total Dissipation (Tc=25°C) Symbols Unit Ptot W BUV20 BUV21 Specifications BUV22 250 BUV23 BUV24 Max. Collector Current ICM A 50 40 40 30 20 Junction Temperature Tjm °C 175 Collector-Base Breakdown V(BR)CBO V Voltage ≥160 ≥250 ≥300 ≥400 ≥450 Collector-Emitter Breakdown V(BR)CEO V Voltage Emitter-Base Breakdown Voltage V(BR)EBO V ≥125 ≥200 ≥250 IC=10mA ≥7 IE=1mA ≥325 ≥400 Collector- Emitter IC= VCE(sat) V ≤1.2 50A ≤1.5 25A ≤1.5 20A ≤0.8 8A ≤0.6 6A Saturation Voltage Drop IB= 5A...




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