POWER TRANSISTOR. 2N6546 Datasheet

2N6546 TRANSISTOR. Datasheet pdf. Equivalent


Part 2N6546
Description NPN SILICON POWER TRANSISTOR
Feature 2N6546 2N6547 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CE.
Manufacture Central Semiconductor
Datasheet
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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MI 2N6546 Datasheet
2N6546 Datasheet
2N6546 2N6547 NPN SILICON POWER TRANSISTOR w w w. c e n t r 2N6546 Datasheet
SavantIC Semiconductor Silicon NPN Power Transistors Produc 2N6546 Datasheet
2N6546 Datasheet
2N6546 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 2N6546 Datasheet
Recommendation Recommendation Datasheet 2N6546 Datasheet




2N6546
2N6546
2N6547
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6546, 2N6547
types are NPN Silicon Power Transistors designed for
high voltage, high current, applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
VCEV
Collector-Emitter Voltage
VCEX
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Emitter Current
IE
Peak Emitter Current
IEM
Continuous Base Current
IB
Peak Base Current
IBM
Power Dissipation
PD
Power Dissipation, TC=100°C
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
2N6546
2N6547
650 850
350 450
300 400
9.0
15
30
25
50
10
20
175
100
-65 to +200
1.0
UNITS
V
V
V
V
A
A
A
A
A
A
W
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6546
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEV, VBE=1.5V
- 1.0
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
- 4.0
ICER
VCE=Rated VCEV, RBE=50Ω, TC=100°C
- 5.0
IEBO
VEB=9.0V
- 1.0
BVCEX
VCL=Rated VCEX, IC=8.0A, TC=100°C
350 -
BVCEX
VCL=Rated VCEO-100V, IC=15A, TC=100°C
200 -
BVCEO IC=100mA
300 -
VCE(SAT) IC=10A, IB=2.0A
- 1.5
VCE(SAT) IC=10A, IB=2.0A, TC=100°C
- 2.5
VCE(SAT) IC=15A, IB=3.0A
- 5.0
VBE(SAT) IC=10A, IB=2.0A
- 1.6
VBE(SAT) IC=10A, IB=2.0A, TC=100°C
- 1.6
hFE VCE=2.0V, IC=5.0A
12 60
hFE VCE=2.0V, IC=10A
6.0 30
2N6547
MIN MAX
- 1.0
- 4.0
- 5.0
- 1.0
450 -
300 -
400 -
- 1.5
- 2.5
- 5.0
- 1.6
- 1.6
12 60
6.0 30
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
R2 (12-December 2011)



2N6546
2N6546
2N6547
NPN SILICON
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP MAX
ft VCE=10V, IC=500mA, f=1.0MHz
Cob VCB=10V, IE=0, f=1.0MHz
Is/b VCE=100V, t=1.0s
6.0
125
0.2
28
500
Resistive Load
td
tr
ts
tf
VCC=250V, IC=10A,
IB1=IB2=2.0A, tp=100μs,
Duty Cycle≤2.0%
0.05
1.0
4.0
0.7
Inductive Load (Clamped)
ts VCL=Rated VCEX, IC=10A,
tf IB1=2.0A, VBE=5.0V, TC=100°C
5.0
1.5
ts VCL=Rated VCEX, IC=10A,
tf IB1=2.0A, VBE=5.0V, TC=25°C
2.0
0.9
TO-3 CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
A
μs
μs
μs
μs
μs
μs
μs
μs
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2 (12-December 2011)







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