Silicon NPN Power Transistors
Product Specification
TIP31/31A/31B/31C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC=...
Silicon
NPN Power
Transistors
Product Specification
TIP31/31A/31B/31C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- TIP31; 60V(Min)- TIP31A 80V(Min)- TIP31B; 100V(Min)- TIP31C
·Complement to Type TIP32/32A/32B/32C
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
TIP31
40
VCBO
Collector-Base Voltage
TIP31A TIP31B
60 80
V
TIP31C 100
TIP31
40
VCEO
Collector-Emitter Voltage
TIP31A TIP31B
60 80
V
TIP31C 100
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
3A
ICM Collector Current-Pulse
IB Base Current
Collector Power Dissipation
PC
TC=25℃ Collector Power Dissipation
Ta=25℃
Tj Junction Temperature
Tstg Storage Ttemperature Range
5 1 40 2 150 -65~150
A A
W
℃ ℃
1
Silicon
NPN Power
Transistors
Product Specification
TIP31/31A/31B/31C
ELECTRICAL CHARACTERISTICS
...
