Document
TIP31 TIP31A TIP31B TIP31C
SILICON NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP31 series devices are silicon NPN epitaxial-base power transistors designed for power amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TIP31
Collector-Base Voltage
VCBO 40
Collector-Emitter Voltage
VCEO 40
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
TIP31A TIP31B TIP31C 60 80 100 60 80 100 5.0 3.0 5.0 1.0 40 2.0 -65 to +150 62.5 3.13
UNITS V V V A A A W W °C
°C/W °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICEO
VCE=30V (TIP31, TIP31A)
ICEO
VCE=60V (TIP.