|
|
Darlington Transistor. TIP31 Datasheet |
|
|
|
TIP31/31A/31B/31C
◎ SEMIHOW REV.A0,Oct 2007
|
TIP31/31A/31B/31C
Medium Power Linear Switching Applications
- Complement to TIP32/32A/32B/32C
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
VCBO
40
60
80
100
V
V
V
V
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
VCEO
40
60
80
100
V
V
V
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
5
3
5
1
2
40
150
-65~150
V
A
A
A
W
W
℃
℃
PNP Epitaxial
Silicon Darlington
Transistor
TO-220
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
VCEO(SUS)
IC=30mA, IB=0
40
60
80
100
V
V
V
V
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
Emitter Cut-off Current
*DC Current Gain
ICEO
ICES
IEBO
hFE
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Output Capacitance
* Pulse Test: PW≤300us, Duty Cycle≤2%
VCE(sat)
VBE(on)
fT
VCE=30V,IB=0
VCE=60V,IB=0
VCE=40V,VEB=0
VCE=60V,VEB=0
VCE=80V,VEB=0
VCE=100V,VEB=0
VEB=5V,IC=0
VCE=4V,IC=1A
VCE=4V,IC=3A
IC=3A,IB=375mA
VCE=4V,IC=3A
VCE=10V,IC=500mA,f=1㎒
25
10
3.0
0.3 ㎃
0.3 ㎃
200 ㎂
200 ㎂
200 ㎂
200 ㎂
1㎃
50
1.2 V
1.8 V
㎒
◎ SEMIHOW REV.A0,Oct 2007
|
Typical Characteristics
◎ SEMIHOW REV.A0,Oct 2007
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |