Power Transistors. TIP32 Datasheet


TIP32 Transistors. Datasheet pdf. Equivalent


TIP32


Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

Complementary Silicon Plastic Power Transistors
Designed for use in general purpose amplifier and switching applications.
• Collector-Emitter Saturation Voltage -
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector-Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32 = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C
• High Current Gain - Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO-220 AB Package

MAXIMUM RATINGS Rating

Symbol Value Unit

Collector-Emitter Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C

VCEO

40 Vdc 60 80 100

Collector-Base Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C

VCB

40 Vdc 60 80 100

Emitter-Base Voltage Collector Current

Continuous Peak

VEB IC

5.0 Vdc
3.0 Adc 5.0

Base Current
Total Power Dissipation @ TC = 25_C Derate above 25_C
Total Power Dissipati...



TIP32
TIP31, TIP31A, TIP31B, TIP31C,
(NPN), TIP32, TIP32A, TIP32B,
TIP32C, (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Collector-Emitter Saturation Voltage -
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector-Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32
= 60 Vdc (Min) - TIP31A, TIP32A
= 80 Vdc (Min) - TIP31B, TIP32B
= 100 Vdc (Min) - TIP31C, TIP32C
High Current Gain - Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO-220 AB Package
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO
40 Vdc
60
80
100
Collector-Base Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCB
40 Vdc
60
80
100
Emitter-Base Voltage
Collector Current
Continuous
Peak
VEB
IC
5.0 Vdc
3.0 Adc
5.0
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
Unclamped Inductive
Load Energy (Note 1)
IB 1.0 Adc
PD
40 Watts
0.32 W/_C
PD
2.0 Watts
0.016 W/_C
E 32 mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to
+ 150
_C
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
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3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40-60-80-100 VOLTS
40 WATTS
MARKING
4 DIAGRAM
12 3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
AYWW
TIPxxx
TO-220AB
CASE 221A-09
STYLE 1
xxx = Specific Device Code:
31, 31A, 31B, 31C, 32, 32A, 32B, 32C
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2003
January, 2003 - Rev. 8
1
Publication Order Number:
TIP31A/D

TIP32
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
RθJA
RθJC
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
TIP31, TIP32, TIP31A, TIP32A
TIP31B, TIP31C, TIP32B, TIP32C
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
VCE(sat)
VBE(on)
fT
hfe
Max
62.5
3.125
Unit
_C/W
_C/W
Min Max Unit
40 - Vdc
60 -
80 -
100 -
- 0.3 mAdc
- 0.3
µAdc
- 200
- 200
- 200
- 200
- 1.0 mAdc
25 -
-
10 50
- 1.2 Vdc
- 1.8 Vdc
3.0 - MHz
20 -
-
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