Bipolar Transistor. TIP31 Datasheet

TIP31 Transistor. Datasheet pdf. Equivalent

TIP31 Datasheet
Recommendation TIP31 Datasheet
Part TIP31
Description High Power Bipolar Transistor
Feature TIP31; TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCE.
Manufacture Multicomp
Datasheet
Download TIP31 Datasheet




Multicomp TIP31
TIP31, TIP32
High Power Bipolar Transistors
Features:
Collector - emitter sustaining voltage - VCEO (sus)
= 60 V (Minimum) - TIP31A, TIP32A
= 100 V (Minimum) - TIP31C, TIP32C
Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A
Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA
TO-220
Pin
1. Base
2. Collector
3. Emitter
4. Collector (Case)
Maximum Ratings
Dimensions
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Characteristic
Collector - emitter voltage
Collector - base voltage
Emitter - base voltage
Collector current - continuous
- peak
Base current
Total power dissipation at tc = 25°C
derate above 25°C
Operating and storage junction temperature range
Minimum Maximum
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.2 2.97
0.33 0.55
2.48 2.98
3.7 3.9
Dimensions : Millimetres
NPN
TIP31A
TIP32C
PNP
TIP32A
TIP32C
3 Amperes
Complementary Silicon
Power Transistors
60 - 100 Volts
40 Watts
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, TSTG
TIP31A
TIP32A
TIP31C
TIP32C
60 100
5
3
5
1
40
0.32
-65 to +150
Unit
V
A
W
W/°C
°C
Thermal Characteristics
Characteristic
Symbol
Maximum
Unit
Thermal resistance junction to case
Rθjc
3.125
°C/W
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15/12/11 V1.1



Multicomp TIP31
TIP31, TIP32
High Power Bipolar Transistors
Figure - 1 Power Derating
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol Minimum Maximum
OFF Characteristics
Collector - emitter sustaining voltage (1)
(IC = 30 mA, IB = 0)
TIP31A, TIP32A
TIP31C, TIP32C
Collector cut off current
(VCE = 30V, IB = 0)
(VCE = 60V, IB = 0)
Collector cut off current
(VCE = 60 V, VEB = 0)
(VCE = 100 V, VEB = 0)
Emitter cut off current
(VEB = 5 V, IC = 0)
TIP31A, TIP32A
TIP31C, TIP32C
TIP31A, TIP32A
TIP31C, TIP32C
ON Characteristics (1)
VCEO (SUS)
ICEO
ICES
IEBO
DC current gain
(IC = 1 A, VCE = 4 V)
(IC = 3 A, VCE = 4 V)
Collector - emitter saturation voltage
(IC = 3 A, IB = 375 mA)
Base - emitter on voltage
(IC = 3 A, VCE = 4 V)
Dynamic Characteristics
hFE
VCE (sat)
VBE (on)
Current gain - bandwidth product (2)
(IC = 500 mA, VCE = 10 V, fTEST = 1 KHz)
fT
Small - signal current gain
(IC = 500 A, VCE = 10 V, f = 1 kHz)
hfe
60
100
-
-
-
25
15
-
-
3
20
-
0.3
0.2
1
-
50
1.2
1.8
-
-
Unit
V
mA
-
V
MHz
-
(1) Pulse Test : Pulse width 300 µs, duty cycle 2%
(2) fT = hFE• fTEST
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Page <2>
15/12/11 V1.1



Multicomp TIP31
TIP31, TIP32
High Power Bipolar Transistors
Figure - 2 Switching Time Equivalent Circuit
Figure - 3 Turn-On Time
Figure - 4 DC Current Gain
IC, Collector Current (Amperes)
Figure - 5 Turn-Off Time
IC, Collector Current (Amperes)
Figure - 6 Active Region Safe Operating Area
IC, Collector Current (Amperes)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure - 6 curve is based on TJ (PK) = 150°C;
TC is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ (PK) = 150°C, At high case temperatures,
thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown
VCE, Collector Emitter Voltage (Volts)
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www.farnell.com
www.newark.com
Page <3>
15/12/11 V1.1







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