TIP31, TIP32
High Power Bipolar Transistors
Features:
• Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Mini...
TIP31, TIP32
High Power Bipolar
Transistors
Features:
Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C
Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA
TO-220
Pin
1. Base
2. Collector 3. Emitter 4. Collector (Case)
Maximum Ratings
Dimensions
A B C D E F G H I J K L M O
Characteristic
Collector - emitter voltage
Collector - base voltage
Emitter - base voltage Collector current - continuous
- peak Base current Total power dissipation at tc = 25°C derate above 25°C
Operating and storage junction temperature range
Minimum Maximum
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.2 2.97
0.33 0.55
2.48 2.98
3.7 3.9
Dimensions : Millimetres
NPN TIP31A TIP32C
PNP TIP32A TIP32C
3 Amperes Complementary Silicon
Power
Transistors ...
