TIP122

TIP120/121/122 TIP120/121/122 ◎ SEMIHOW REV.A0,Oct 2007 TIP120/121/122 TIP120/121/122 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP120 : TIP121 : TIP122 VCBO 60 V 80 V 100 V Collector-Emitter Voltage : TIP120 : TIP121 : TIP122 VCEO 60 V 80 V 100 V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VEBO IC ICP IB PC PC TJ TSTG 5 5 8 120 2 65 150 -65~150 V A A ㎃ W W ℃ ℃ PNP Epitaxial Silicon Darlington Transistor Equivalent Circuit TO-220 1. Base 2. Collector 3. Emitter 12 3 Electrical Characteristics...