isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emi...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A
·Complement to Type TIP122 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
TIP127
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-5
ICM
Collector Current-Peak
-8
IB
Base Current-DC
Collector Power Dissipation
PC
TC=25℃ Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
-120 65 2 150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A mA
W
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.92 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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isc Silicon
PNP Darlington Power
Transistor
TIP127
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
-100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -12mA
-2.0
V
VCE(sat)-2 Collector-Em...