BD243C

isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD243 55 BD243A 70 VCBO Collector-Base Voltage V BD243B 90 BD243C 110 BD243 45 VCEO Collector-Emitter Voltage BD243A 60 V BD243B 80 BD243C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 VCEO(SUS) Collector-Emitter Sustaining Voltage BD243A BD243B IC= 30mA ;IB=0 VCE(sat) VBE(on) BD243C Collector-Emitter Voltage Saturation IC= 6A; IB= 1A Base-Emitter On Voltage IC= 6A ; VCE= 4V BD243 VCB= 55V; VBE= 0 ICBO Collector Cutoff ...