BDW94B

Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A BDW94B -60 -80 V BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A BDW94B -60 -80 V BDW94C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak IB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -15 -0.2 80 150 -65~150 A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT ℃/W 1 Product Specification BDW94/A/B/C Silicon PNP Power Transistor ELECTRICAL CHARACTER...