BD909 / BD911
NPN Complementary Silicon Power Transistors
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)...
BD909 / BD911
NPN Complementary Silicon Power
Transistors
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Currentt Total Power Dissipation @ TC ≤ 25 OC Operating Junction Temperature Range Storage Junction Temperature Range Thermal Resistance, Junction to Case
Symbol
VCBO VCEO VEBO
IC IB Ptot TJ TJ, Ts RθJC
Value
BD909
BD911
80 100
80 100
5
15
5
90
150
-65 to +150
1.4
Unit
V V V A A W OC OC OC/W
SEMTECH ELECTRONICS LTD.
®
Dated : 17/09/2016 Rev: 01
BD909 / BD911
Characteristics at TC = 25 OC Parameter
DC Current Gain at VCE = 4 V, IC = 0.5 A at VCE = 4 V, IC = 5 A at VCE = 4 V, IC = 10 A
Collector Emitter Sustaining Voltage at IC = 100 mA
Collector Cutoff Current at VCB = 80 V at VCB = 100 V
Collector Cutoff Current at VCE = 40 V at VCE = 50 V
Emitter Cutoff Current at VEB = 5 V
Collector Emitter Saturation Voltage at IC = 5 A, IB = 0.5 A at IC = 1...
