Power Transistors. BD242 Datasheet

BD242 Transistors. Datasheet pdf. Equivalent


Part BD242
Description Silicon PNP Power Transistors
Feature SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BD242/A/B/C DESCRIPTION.
Manufacture SavantIC
Datasheet
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BD242
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD242/A/B/C
DESCRIPTION
·With TO-220C package
·Complement to type BD241/A/B/C
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD242
VCBO
Collector-base voltage
BD242A
BD242B
Open emitter
BD242C
BD242
VCEO
Collector-emitter voltage
BD242A
BD242B
Open base
BD242C
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-3
-5
-1
40
150
-65~150
UNIT
V
V
V
A
A
A
W



BD242
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD242/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD242
VCEO(SUS)
Collector-emitter
sustaining voltage
BD242A
BD242B
IC=30mA; IB=0
BD242C
VCEsat
VBE
ICEO
ICES
IEBO
hFE-1
hFE-2
Collector-emitter saturation voltage
IC=-3A;IB=-0.6 A
Base-emitter on voltage
IC=-3A ; VCE=-4V
Collector cut-off current
BD242/A VCE=-30V; IB=0
BD242B/C VCE=-60V; IB=0
BD242
VCE=-45V; VBE=0
Collector cut-off current
BD242A
BD242B
VCE=-60V; VBE=0
VCE=-80V; VBE=0
BD242C VCE=-100V; VBE=0
Emitter cut-off current
VEB=-5V; IC=0
DC current gain
IC=-1A ; VCE=-4V
DC current gain
IC=-3A ; VCE=-4V
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-1.2 V
-1.8 V
-0.3 mA
-0.2 mA
-1 mA
25
10
2







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