TIP105

TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP100/101/102 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP105 : TIP106 : TIP107 VCBO -60 -80 -100 V V V Collector-Emitter Voltage : TIP105 : TIP106 : TIP107 VCEO -60 -80 -100 V V V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VEBO IC ICP IB PC PC TJ TSTG -5 -8 -15 -1 2 80 150 -65~150 V A A A W W ℃ ℃ PNP Epitaxial Silicon Darlington Transistor Equivalent Circuit TO-220 1. Base 2. Collector 3. Emitter 12 3 Electrical Char...