Document
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX34/A/B/C
DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C
APPLICATIONS ·For power linear and switching
applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BDX34
VCBO
Collector-base voltage
BDX34A BDX34B
BDX34C
BDX34
VCEO
BDX34A Collector-emitter voltage
BDX34B
BDX34C
VEBO IC ICM IB PC Tj Tstg
Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter
Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -10 -15 -0.25 70 150
-65~150
UNIT
V
V
V A A A W
MAX 1.78
UNIT /W
SavantIC Semiconductor
Silicon PNP Power Transistors
P.