Power Transistor. BUT11A Datasheet


BUT11A Transistor. Datasheet pdf. Equivalent


BUT11A


High Voltage Fast-switching NPN Power Transistor
SEMICONDUCTOR

BUT11A Series RRooHHSS
Nell High Power Products

High Voltage Fast-switching NPN Power Transistor 5A/450V

FEATURES
High voltage capability
Fast switching speed
TO-220AB package which can be installed to the heat sink with one screw
APPLICATIONS
Flyback and forward single transistor low power converters Inverters Converters Switching regulators
Motor control systems

C

B CE

TO-220AB
(BUT11A)

C (2)
B (1) NPN
E(3)

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL

PARAMETER

TEST CONDITIONS

VCES

Collector to emitter voltage

VBE=0

VCEO

Collector to emitter voltage

IB=0

VEBO

Emitter to base voltage

IC=0

IC Collector current-continuous

ICM Peak collector current

tp<5 ms

IB Base Current IBM Peak base current PD Collector power dissipation

tp<5ms Ta=25°C

TJ Junction temperature

TSTG

Storage temperature

VALUE 1000 450 9 5 10 2 4 100 150
-65 to 150

UNIT V
A W °C

THERMAL CHARACTERISTICS (TC = 25°C)

SYMBOL

PARAMETER

Rth(j-c)

The...



BUT11A
SEMICONDUCTOR
BUT11A Series RRooHHSS
Nell High Power Products
High Voltage Fast-switching NPN Power Transistor
5A/450V
FEATURES
High voltage capability
Fast switching speed
TO-220AB package which can be
installed to the heat sink with one screw
APPLICATIONS
Flyback and forward single transistor
low power converters
Inverters
Converters
Switching regulators
Motor control systems
C
B
CE
TO-220AB
(BUT11A)
C (2)
B
(1) NPN
E(3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VCES
Collector to emitter voltage
VBE=0
VCEO
Collector to emitter voltage
IB=0
VEBO
Emitter to base voltage
IC=0
IC Collector current-continuous
ICM Peak collector current
tp<5 ms
IB Base Current
IBM Peak base current
PD Collector power dissipation
tp<5ms
Ta=25°C
TJ Junction temperature
TSTG
Storage temperature
VALUE
1000
450
9
5
10
2
4
100
150
-65 to 150
UNIT
V
A
W
°C
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
VALUE
1.5
UNIT
ºC/W
www.nellsemi.com
Page 1 of 6

BUT11A
SEMICONDUCTOR
BUT11A Series RRooHHSS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
ICES
lEBO
Collector to emitter cutoff current
Emitter to base cutoff current
VCE=1000V, VBE=0
VEBO=9V, lC=0
TC=25°C
TC=125°C
VCEO
Collector to emitter voltage
IB=0
450
VCEO(SUS)* Collector to emitter sustaining voltage IC=100mA, IB=0, L=25mH
450
hFE*
VCE(sat)*
Forward current transfer ratio
(DC current gain)
IC=5mA, VCE=5V
IC=0.5A, VCE=5V
Collector to emitter saturation voltage IC=2.5A, IB=0.5A
10
10
VBE(sat)*
Base to emitter saturation voltage
SWITCHING TIMES RESISTIVE LOAD
IC=2.5A, IB=0.5A
ton Turn-on time
tstg Storage time
tf Fall time
SWITCHING TIMES INDUCTIVE LOAD
IC=2.5A, IB(on)= -IB(off)=0.5A,
VCC=250V
tstg Storage time
tf Fall time
IC=2.5A, IB(on)=0.5A,
VCC=300V,VEB=5V,
LB=1µH
TC=25°C
TC=100°C
TC=25°C
TC=100°C
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
Typ.
18
20
1.1
1.2
80
140
Max.
1.0
2.0
10
35
35
1.5
1.3
1
4
0.8
1.4
1.5
150
300
UNIT
mA
V
V
µS
µS
nS
www.nellsemi.com
Page 2 of 6




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