MTB040P04Q8

CYStech Electronics Corp. Spec. No. : C967Q8 Issued Date : 2016.09.21 Revised Date : 2017.02.13 Page No. : 1/9 P-Channel Enhancement Mode MOSFET MTB040P04Q8 BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON@VGS=-10V, ID=-6A RDSON@VGS=-4.5V,ID=-5A Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package -40V -6.8A -5.4A 31mΩ(typ) 41mΩ(typ) Equivalent Circuit MTB040P04Q8 Outline DD SOP-8 DD G：Gate S：Source D：Drain Pin 1 G SSS Ordering Information Device MTB040P04Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating and halogen-free package) 2500 pcs/ Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB040P04Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C967Q8 Issued Date : 2016.09.21 Revised Date : 2017.02.13 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TA=25°C (Note 1) Continuous Drain Current @ VGS=-10V, TA=70°C (Note 1) Pulsed Drain Current (Note 2) Avalanche Current @ L=0.1mH Avalanche Energy @ L=2mH, ID=-12A, VDD=-15V (Note 3) Total Power Dissipation (Note 1) TA=25 °C TA=70 °C Operating Junction and Storage Temperature Symbol BVDSS VGS ID IDM IAS EAS PD Tj, Tstg Note : ...