N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C807F3 Issued Date : 2009.12.02 Revised Date : 2015.09.04 Page No. : 1/9
N-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C807F3 Issued Date : 2009.12.02 Revised Date : 2015.09.04 Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB04N03F3 BVDSS ID@VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=30A VGS=4.5V, ID=24A
Features
Low On-resistance Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package
30V 115A 3.4mΩ 4.3mΩ
Symbol
MTB04N03F3
Outline
TO-263
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTB04N03F3-0-T7-X
TO-263 (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products
Product name
MTB04N03F3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
V...
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