P-Channel Enhancement Mode Power MOSFET
Spec. No. : C136J3
CYStech Electronics Corp.
Issued Date : 2015.09.04 Revised Date :
P-Channel Enhancement Mode Power...
Description
Spec. No. : C136J3
CYStech Electronics Corp.
Issued Date : 2015.09.04 Revised Date :
P-Channel Enhancement Mode Power MOSFET
MTE300P10J3 BVDSS ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-5A
-100V -6.6A 368mΩ(typ)
Features
Low Gate Charge Simple Drive Requirement Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTE300P10J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTE300P10J3-0-T3-G
Package
TO-252 (Pb-free lead plating & halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTE300P10J3
CYStek Product Specification
Spec. No. : C136J3
CYStech Electronics Corp.
Issued Date : 2015.09.04 Revised Date :
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Sour...
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