Document
CYStech Electronics Corp.
Spec. No. : C135N3 Issued Date : 2015.09.07
Revised Date : Page No. : 1/9
-100V P-Channel Enhancement Mode MOSFET
MTE300P10KN3
Features
• Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD Protected Gate • Pb-free lead plating package
BVDSS ID @ VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-1A
-100V -1.2A
378mΩ(typ)
Symbol
MTE300P10KN3
Outline
SOT-23
D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTE300P10KN3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products Product name
MTE300P10KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C135N3 Issued Date : .