MTB100N10RKJ3

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTB100N10RKJ3 Spec. No. : C059J3 Issued Date : 2016.09.01 Revised Date : Page No. : 1/9 Features Low Gate Charge Simple Drive Requirement ESD protected gate Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB100N10RKJ3-0-T3-G Package TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB100N10RKJ3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Sou...