MTDA4N20J3

CYStech Electronics Corp. Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTDA4N20J3 BVDSS ID 200V 15A RDSON(MAX) 140mΩ Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit MTDA4N20J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1mH, ID=11A, RG=25Ω Repetitive Avalanche Energy @ L=0.5mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Symbol VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg MTDA4N20J3 Limits 200 ±30 15 10.5 60 11 60.5 30.2 69 26...