Dual N-Channel MOSFET
MSC0205W
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =6A RDS(ON) < 28m Ω @ V...
Description
MSC0205W
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0205W
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
20 ±10
6 3.8 25 1.25 -55 To 150
...
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