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MSC0207SE

MORESEMI

Dual N-Channel MOSFET

MSC0207SE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ ...


MORESEMI

MSC0207SE

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MSC0207SE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ● ESD protected Application ●PWM application ●Load switch PIN Configuration Lead Free Marking and pin assignment SOT-23-6L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0207SE MSC0207SE SOT-23-6L Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 7 30 1.25 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resista...




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