MSC0606W

MSC0606W N and P-Channel Enhancement Mode Power MOS FET General Features ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -60V,ID = -5A RDS(ON) < 80mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment SOP-8 top view N-channel P-channel Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0606W MSC0606W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation TA=25℃ TA=70℃ TA=25℃ VGS ±20 6.3 ID 4.5 IDM 40 PD 2.0 Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 P-Channel -60 ±20 -5 -3.5 -25 2.0 -55 To 150 Unit V V A A W ℃ MORE Semiconductor Compan...