MSN0330D

MSN0330D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =30A RDS(ON) <14mΩ @ VGS=10V RDS(ON) <25mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply PIN Configuration Marking and pin Assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package MSN0330D MSN0330D TO-252-2L Schematic diagram Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Dr...