MSN0603

MSN0603 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery switch ●DC/DC converter Lead Free PIN Configuration Marking and Pin Assignment D G SOT-23 top view S Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0603 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 60 ±20 3 10 1.7 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 73.5 ℃/W MORE...