MSN0612W

MSN0612W 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Lead Free Application ● Power switching application ● Load switch PIN Configuration Schematic diagram SOP-8 top view Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package MSN0612W MSN0612W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 60 ±20...