MSN0620D

MSN0620D 60V(D-S) N-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment PIN Configuration TO-252-2L top view Schematic diagram Package Marking And Ordering Information Device Marking Device Device Package MSN0620D MSN0620D TO-252-2L Reel Size - Tape width - Quantity 2500PCS Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation De...