MSN06M3E
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5...
MSN06M3E
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating：HBM 2300V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display,
memories,
transistors, etc. ●Battery operated systems ●Solid-state relays
Lead Free
Marking and pin assignment
PIN Configuration
SOT-23 top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device MSN06M3E
Device Package SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ =150℃) Drain Current-Pulsed (Note 1)
TA =25℃ TA =100℃
Maximum Power Dissipation
Operating Junction and...
