MSN10B1K

MSN10B1K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =100V,ID =110A RDS(ON) <9mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN10B1K MSN10B1K TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power ...