LT7N60

Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features  High ruggedness  RDS(ON) (Max 1.3 Ω)@VGS=10V  Gate Charge (Typ 38nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. LT7N60 N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT P 7N60A 2 LT F 7N60A Marking LT7N60A LT7N60A Package TO-220 TO-220F Packaging TUBE TUBE （2011-AUG Version1.0）www.longtiumic.com 1/7 LT7N60 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Contin...