K2247 Datasheet: 2SK2247





K2247 2SK2247 Datasheet

Part Number K2247
Description 2SK2247
Manufacture Hitachi Semiconductor
Total Page 7 Pages
PDF Download Download K2247 Datasheet PDF

Features: 2SK2247 Silicon N-Channel MOS FET Appli cation High speed power switching Featu res • Low on-resistance • High spee d switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC con verter, motor drive, power switch, sole noid drive Outline UPAK G 21 3 4 D 1. Gate 2. Drain 3. Source 4. Drain S 2SK2247 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain t o source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Ch annel dissipation VDSS VGSS ID I *1 D( pulse) I DR Pch*2 30 ±20 2 4 2 1 Cha nnel temperature Tch 150 Storage temp erature Tstg –55 to +150 Notes 1. P W ≤ 100 µs, duty cycle ≤ 10 % 2. W hen using the alumina ceramic board (12 .5 × 20 × 0.7mm) 3. Marking is “QY Unit V V A A A W °C °C Electrica l Characteristics (Ta = 25°C) Item S ymbol Min Drain to source breakdown vo ltage V(BR)DSS 30 Gate to source breakdown voltage V(BR)GSS.

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2SK2247
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source.
Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S

                    






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