2SK2247
2SK2247
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed swit...
Description
2SK2247
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
UPAK G
21 3
4
D
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2247
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation
VDSS VGSS ID I *1
D(pulse)
I DR Pch*2
30 ±20 2 4 2 1
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) 3. Marking is “QY”
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
30
Gate to source breakdown voltage
V(BR)GSS...
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